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Proceedings Paper

Resolution And Overlay Of Submicron I-Line Wafer Steppers
Author(s): James Greeneich; Steve Wittekoek; Martin van den Brink; Barton Katz; Jos Coolsen
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Paper Abstract

Using the i-line wavelength for production wafer steppers offers an improved combination of high resolution and large depth of focus compared to existing g-line steppers. A number of practical issues associated with i-line steppers include possible lens related absorption effects, lenses with insufficient field size or resolution, availability of i-line resist processes, accurate through the lens alignment, and multiple machine matching performance with low distortion lenses. Experimental results are presented in this paper on each of these issues. Data is presented for a multiple number of i-line steppers equipped with the Zeiss 10-78-58 lens.. Support of half-micron design rules is demonstrated. Resolution over the image field to 0.5 μm with a large depth of focus is shown and overlay performance to less than 150 nm is demonstrated.

Paper Details

Date Published: 1 January 1988
PDF: 14 pages
Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968425
Show Author Affiliations
James Greeneich, ASM Lithography (The Netherlands)
Steve Wittekoek, ASM Lithography (The Netherlands)
Martin van den Brink, ASM Lithography (The Netherlands)
Barton Katz, ASM Lithography (The Netherlands)
Jos Coolsen, ASM Lithography (The Netherlands)


Published in SPIE Proceedings Vol. 0922:
Optical/Laser Microlithography
Burn Jeng Lin, Editor(s)

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