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Proceedings Paper

Single-Step, Positive-Tone, Lift-Off Process Using AZ 5214-E Resist
Author(s): D. R. Dunbobbin; J. Faguet
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Paper Abstract

A novel technique is proposed to induce a positive tone, lift-off stencil in AZ 5214-E resist. The technique requires a flood exposure to be applied to a film of resist which induces a solubility gradient through the film. The solubility gradient is then reversed by a post exposure bake and is retained after image-wise exposure. The technique is demonstrated with results of image-wise exposures, by contact lithography, from 0.9 and 0.5 micron spacewidths in dark-field chrome masks. Resists profiles are displayed as a function of flood exposure, image-wise exposure and developer normality. Spacewidths in the resist film are plotted as a function of image-wise exposure energy and Gallium Arsenide MESFET structures with 1.0 micron gate-lengths are fabricated using the new process.

Paper Details

Date Published: 1 January 1988
PDF: 9 pages
Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968421
Show Author Affiliations
D. R. Dunbobbin, Tachonics Corporation (United States)
J. Faguet, Tachonics Corporation (United States)

Published in SPIE Proceedings Vol. 0922:
Optical/Laser Microlithography
Burn Jeng Lin, Editor(s)

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