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Proceedings Paper

The Use Of A Non-Actinic Dye In A Conventional Positive Photoresist For Improved Target Alignment In The Dark Field Mode
Author(s): David A. Sawoska; Keith D. SanGiacomo; Elaine C. Jacov ich; William F. Cordes III
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Paper Abstract

The need for photolithographic equipment to automatically align with improved accuracy is imperative, particularly considering the submicron design rules of megabit devices. By the addition of a non-actinic dye to a conventional positive photoresist (EZ-dye to EPA914, for example) and the utilization of a 1:1 Ultratech stepper, an improvement in alignment signal quality and the process window for optimized alignment operation on non-optimized targets is reported. The results obtained with the same resist without the dye are used as a baseline to further characterize the influence of the dye on target recognition and yield in actual production. The technique/mechanism of the dye interaction with the dark field technology utilized by the Ultratech stepper is described in detail. For example, it can be shown that with the incorporation of a dye that absorbs light at a given wavelength (for the Ultratech stepper this is found to be about 550 nm), the detection signal is optimized and the characteristic alignment peak is more easily recognized because of its increased sharpness and intensity. It follows from these observations that level-to-level alignment is improved.

Paper Details

Date Published: 1 January 1988
PDF: 5 pages
Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968416
Show Author Affiliations
David A. Sawoska, MacDermid Incorporated (United States)
Keith D. SanGiacomo, MacDermid Incorporated (United States)
Elaine C. Jacov ich, MacDermid Incorporated (United States)
William F. Cordes III, MacDermid Incorporated (United States)

Published in SPIE Proceedings Vol. 0922:
Optical/Laser Microlithography
Burn Jeng Lin, Editor(s)

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