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Proceedings Paper

Modeling High Numerical Aperture Optical Lithography
Author(s): Michael S Yeung
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Paper Abstract

Electromagnetic diffraction theory is applied to obtain a rigorous and comprehensive description of the imaging and exposure process in a projection optical system imaging a one-dimensional, periodic object in a planar layer of photoresist. The method is applicable to high numerical aperture and thick-photoresist systems, and accounts for the exposure dependent absorption characteristics of positive photoresists. It is used with the development simulator in SAMPLE to simulate the physical profile of the developed image. Theoretical and experimental results are given, which show asymmetrical variation of the developed image with focus. This asymmetry is found to depend on photoresist thickness, and the dependence is shown to be incompatible with the usual approximation of normal ray propagation in the photoresist.

Paper Details

Date Published: 1 January 1988
PDF: 19 pages
Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968409
Show Author Affiliations
Michael S Yeung, Intel Corporation (United States)


Published in SPIE Proceedings Vol. 0922:
Optical/Laser Microlithography
Burn Jeng Lin, Editor(s)

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