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Proceedings Paper

Understanding Focus Effects In Submicron Optical Lithography
Author(s): Chris A Mack
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Paper Abstract

In the age of submicron optical lithography, focus has become a critical process parameter. Each decrease in minimum feature size is accompanied by a corresponding decrease in depth-of-focus (DOF). Sources of focus errors, such as wafer warpage, topography, and the thickness of the photoresist, however, are not being reduced in proportion to the DOF. Thus, the effects of focus on the practical resolution capabilities of a lithographic tool are becoming increasingly important.

Paper Details

Date Published: 1 January 1988
PDF: 14 pages
Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968408
Show Author Affiliations
Chris A Mack, National Security Agency (United States)

Published in SPIE Proceedings Vol. 0922:
Optical/Laser Microlithography
Burn Jeng Lin, Editor(s)

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