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Proceedings Paper

An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length
Author(s): Martin P. Karnett; Robert E. Dunham
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Paper Abstract

An improved SEM technique to determine MOS transistor effective channel length is described. The technique utilizes two different chemical etchants under strong illumination to selectively stain/etch the doped regions of the device. Comparison of the SEM measurements to data provided by two different electrical measurement methods shows good agreement (within 0.1 μm).

Paper Details

Date Published: 1 January 1988
PDF: 10 pages
Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968392
Show Author Affiliations
Martin P. Karnett, Department of Defense (United States)
Robert E. Dunham, Department of Defense (United States)


Published in SPIE Proceedings Vol. 0921:
Integrated Circuit Metrology, Inspection, and Process Control II
Kevin M. Monahan, Editor(s)

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