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Proceedings Paper

Characterization Of Submicron Contact Holes Reproduced In Thick Resist By High Numerical Aperture Lenses
Author(s): Wei Lee; John T. Lyon; John H. McCoy; Gil L. Varnell
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Paper Abstract

Submicron contact holes in 1.5 μm resist have been characterized using direct SEM measurement and using hole transfer into polysilicon by reactive ion etching. The performance of these measurement techniques is examined as well as the full-field performance of three g-line reduction lenses with numerical apertures equal to .35, .42, and .45. This performance includes resist slope and shape for contacts from 0.7 to 1.2 m in size, reproduced with optimized process and exposure.

Paper Details

Date Published: 1 January 1988
PDF: 5 pages
Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968379
Show Author Affiliations
Wei Lee, Nikon Precision Incorporated (United States)
John T. Lyon, Nikon Precision Incorporated (United States)
John H. McCoy, Nikon Precision Incorporated (United States)
Gil L. Varnell, Nikon Precision Incorporated (United States)

Published in SPIE Proceedings Vol. 0921:
Integrated Circuit Metrology, Inspection, and Process Control II
Kevin M. Monahan, Editor(s)

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