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Proceedings Paper

Electrical Measurement Of Submicrometer Contact Holes
Author(s): B. J. Lin; J. A. Underhill; D. Sundling; B. Peck
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Paper Abstract

A special technique to electrically measure submicrometer isolated features is described. By incorporating a large number of features in a single test structure, a gain in precision better than 3 nm can be achieved. The interpreted contact hole diameter as well as the area of the isolated features were found to be very accurate. The special test pattern, an analytic expression for interpretation of the results, and hole size data from a variety of exposure dosages are included.

Paper Details

Date Published: 1 January 1988
PDF: 6 pages
Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968364
Show Author Affiliations
B. J. Lin, IBM General Technology Division (United States)
J. A. Underhill, IBM General Technology Division (United States)
D. Sundling, IBM General Technology Division (United States)
B. Peck, IBM General Technology Division (United States)


Published in SPIE Proceedings Vol. 0921:
Integrated Circuit Metrology, Inspection, and Process Control II
Kevin M. Monahan, Editor(s)

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