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Proceedings Paper

Confocal Optical Metrology At 325nm
Author(s): Simon D. Bennett; Eric A. Peltzer; Joan McCall; Richard DeRosa; Ian R. Smith
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Paper Abstract

This paper compares results obtained with semiconductor metrology systems based upon ultra-violet and visible wavelength confocal microscopy. It is shown that the system is capable of linear metrology of resist features down to 0.5 micron linewidth with low dependence on substrate type. Short term precision of better than 5nm standard deviation can be obtained with this system. Experimental data compares the performance of ultra-violet and visible light versions of the system for resist metrology, showing the benefit of using a wavelength at which the resist is absorbent.

Paper Details

Date Published: 1 January 1988
PDF: 7 pages
Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968355
Show Author Affiliations
Simon D. Bennett, SiScan Systems (United States)
Eric A. Peltzer, SiS can Systems (United States)
Joan McCall, SiScan Systems (United States)
Richard DeRosa, SiS can Systems (United States)
Ian R. Smith, SiS can Systems (United States)

Published in SPIE Proceedings Vol. 0921:
Integrated Circuit Metrology, Inspection, and Process Control II
Kevin M. Monahan, Editor(s)

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