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Proceedings Paper

Comparison Of Several Resist Linewidth Fluctuation Reduction Methods From Production Viewpoints
Author(s): Takeo Hashimoto; Hiroshi Yamanaka; Teruo Iino; Sakari Takahashi
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Paper Abstract

The linewidth fluctuation which is caused by interference effect is a very serious problem for critical dimension (CD) control. Three simple resist linewidth fluctuation reduction methods are investigated. These methods are high-contrast resists, dyed resists, and contrast enhancement material (CEM). One-micron line and space patterns of various resist thicknesses are formed on silicide by exposing with a g-line stepper and the degree of linewidth fluctuation is measured. As a r result of the investigation, the high-contrast resist is the most effective method and the degree of linewidth fluctuation of the high-contrast resist is suppressed to about 60% of that of a conventional resist. The degree of linewidth fluctuation of the dyed resist and CEM used with the conventional resist is about 65 and 80% of that of the conventional resist, respectively. Therefore it is considered that high-contrast resist is the most effective method for tight CD control which is needed for 4MDRAM-level devices.

Paper Details

Date Published: 1 January 1988
PDF: 8 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968344
Show Author Affiliations
Takeo Hashimoto, NEC Corporation (Japan)
Hiroshi Yamanaka, NEC Corporation (Japan)
Teruo Iino, NEC Corporation (Japan)
Sakari Takahashi, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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