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Proceedings Paper

Comparison Of Modeling And Experimental Results In Contrast Enhancement Lithography
Author(s): Tom Brown; Chris A. Mack
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Paper Abstract

Characterizing the effects of the many variables that are a part of photolithography is not an easy task. As more sophisticated patterning techniques, such as contrast enhancement lithography (CEL), are introduced the number of variables increases. Two tools are commonly used to deal with the complex task of understanding the interrelationships of these many variables: experimentation and computer simulation. While experimentation, and in particular statistically designed experiments, can give a great deal of insight into a particular system, it is often difficult to extrapolate trends outside of the experimental conditions (e.g., to other lithographic systems). Computer modeling, on the other hand, is rather poor at predicting exact outcomes of specific conditions, but is at its best when predicting trends which may exist over a broad or narrow range of conditions. There exists, however, an uncertainty as to how accurately the model reflects conditions of the real world.

Paper Details

Date Published: 1 January 1988
PDF: 14 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968340
Show Author Affiliations
Tom Brown, General Electric Co. (United States)
Chris A. Mack, National Security Agency (United States)

Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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