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Proceedings Paper

Experimental Tests Of The Steady-State Model For Oxygen Reactive Ion Etching Of Silicon-Containing Polymers
Author(s): Charles W. Jurgensen; Ann Shugard; Nancy Dudash; Elsa Reichmanis; Michael J. Vasile
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Paper Abstract

A steady-state model has been proposed to predict the oxygen reactive-ion-etching resistance of organosilicon polymers. This model is based on a Silicon material balance and the assumption that a protective Si02 film forms and reaches a steady-state thickness on the surface of the polymer. At steady-state, the rate determining step is sputtering of the SiO2 film. This model predicts that the steady-state etching rate is proportional to the sputtering rate of Si02 and inversely proportional to the mass density of silicon in the polymer. It also predicts that the etching rate is independent of other chemical or physical properties of the material. This model accurately predicts the etching behavior of a silyl novolac polymer over a wide range of etching conditions. Two silyl methacrylates etch at the predicted rate under conditions typical of trilevel processing, but exceed the predicted rate under conditions where the average bombardment energy is lower. Surface analysis shows that the steady-state approximation is not valid for the methacrylates under these etching conditions; the oxide thickness continues to increase with time, even though a constant etching rate is achieved. Polymers with very low silicon content do not etch according to the model but form highly porous oxides that continuously accumulate on the surface of the polymer.

Paper Details

Date Published: 1 January 1988
PDF: 7 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968326
Show Author Affiliations
Charles W. Jurgensen, AT&T Bell Laboratories (United States)
Ann Shugard, AT&T Bell Laboratories (United States)
Nancy Dudash, AT&T Bell Laboratories (United States)
Elsa Reichmanis, AT&T Bell Laboratories (United States)
Michael J. Vasile, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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