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Proceedings Paper

A Novel Dry Develop Method Of Photoresist - "Unzipping Development" By Flood UV Irradiation
Author(s): Hayato Katsuragi; Masao Miyazaki; Norio Ishikawa; Kiyoto Mori; Hitomi Yamada; Shinzo Morita; Shuzo Hattori
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Paper Abstract

A novel dry develop method of photoresist - "unzipping development" by flood UV irradiation is described. Evaluated resist consisted of poly-methyl methacrylate (PMMA) and unzipping inhibitors such as p-benzoquinone (p-BQ) and 4,4'-diazide diphenylmethane(4,4'-DDM). As a preliminary experiment has shown that 4,4'-DDM was superior to p-BQ as an unzipping inhibitor, a resist : PMMA added with 40 wt% was mainly evaluated. At patterning exposure (600 ~ 1200 mJ/m2 at 210 ~ 280 nm), 4,4'-DDM in the exposed area fixed into polymer. Then, 4,4'-DDM in the unexposed area was removed in vacuo (0.4 mmHg at 120°C for 1 hr). Finally, negative resist pattern of 1.6 μm was developed by flood UV irradiation (24 J/cm2 at 254 nm) at 90 ~ 130°C without using any solvent. Mechanistic studies were carried out by using IR and UV analyses.

Paper Details

Date Published: 1 January 1988
PDF: 8 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968321
Show Author Affiliations
Hayato Katsuragi, Kanto Chemical Co. (Japan)
Masao Miyazaki, Kanto Chemical Co. (Japan)
Norio Ishikawa, Kanto Chemical Co. (Japan)
Kiyoto Mori, Kanto Chemical Co. (Japan)
Hitomi Yamada, Nagoya University (Japan)
Shinzo Morita, Nagoya University (Japan)
Shuzo Hattori, Nagoya University (Japan)


Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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