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Proceedings Paper

A Novel Silicon-Containing Resist For A Bi-Layer Resist System
Author(s): Tsutomu Noguchi; Keiichi Nito; Jun'etsu Seto; Izumi Hata; Hiroshi Sato; Toshirou Tsumori
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Paper Abstract

A new positive working photoresist which is applicable to the bi-layer resist system using a current g-line stepper has been developed. This resist consists of a naphthoquinone diazide photoactive compound and a silicon containing novolak resin, which is synthesised from phenols with siloxane groups(-Si-O-), and formaldehyde by condensation reaction. The Si-containing resist has a resolution capability of 0.5μm L/S with a g-line sensitivity about 250 mJ/cm2, and a high resistance to oxygen plasma, with an etching rate ratio of 61:1(photoresist/Si resist). 0.5μm L/S pattern was precisely transferred to the bottom layer by 02 RIE with vertical side walls.

Paper Details

Date Published: 1 January 1988
PDF: 8 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968316
Show Author Affiliations
Tsutomu Noguchi, Sony Corporation (Japan)
Keiichi Nito, Sony Corporation (Japan)
Jun'etsu Seto, Sony Corporation (Japan)
Izumi Hata, Sony Corporation (Japan)
Hiroshi Sato, Sony Corporation (Japan)
Toshirou Tsumori, Sony Corporation (Japan)


Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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