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Proceedings Paper

Evaluation Of An Organosilicon Photoresist For Excimer Laser Lithography
Author(s): Janet C. McFarland; Kevin J. Orvek; Gary A. Ditmer
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Paper Abstract

An organosilicon resist was investigated for use in deep UV laser lithography. The resist was based on 0-trimethylsilyl poly(vinylphenol) resin. It was found to exhibit transparency at 248nm comparable to the transparency of g-line light in conventional novolak resists, making single-layer resist processing possible. The results of single-layer and bi-layer patterning on an excimer laser contact printer are presented. The bi-layer processing uses oxygen reactive ion etching (RIE) for transfer of a top layer pattern into a thick underlying novolak layer.

Paper Details

Date Published: 1 January 1988
PDF: 6 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968315
Show Author Affiliations
Janet C. McFarland, Shipley Company (United States)
Kevin J. Orvek, Texas Instruments, Inc. (United States)
Gary A. Ditmer, Plasma Technology (United States)

Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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