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Proceedings Paper

High Resolution Imaging Over Severe Metal Topography Using Dyed Image Reversal Resist
Author(s): Giorgio A. L. M Degiorgis; Mauro G. G Calzavara
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Paper Abstract

This work evaluates the performance of an Image Reversal (Im.Re.) resist with dye added (0-1% by weight) in order to minimize reflectivity effects over aluminum topographies. Planarization over 1-1.5 μm. aluminum steps is studied as a function of viscosity using Im.Re. dyed resist. It is shown that Im.Re. process performance is not only influenced by dye concentration and exposure energies, but it is also significantly affected by the resist composition. High plasma selectivity and sidewall profiles of 85 degrees or higher are obtained with 1.2 μm. coating thickness, resolving 1 μm. 1/s geometries and lower, with limiting resolution, over topography, of Im.Re. dyed resist established in the 0.7-0.9 μm. region.

Paper Details

Date Published: 1 January 1988
PDF: 9 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968313
Show Author Affiliations
Giorgio A. L. M Degiorgis, SGS-Thomson Microelectronics (Italy)
Mauro G. G Calzavara, SGS-Thomson Microelectronics (Italy)

Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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