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Proceedings Paper

Effects Of Ion Bombardment In Oxygen Plasma Etching
Author(s): M. A. Hartney; W. M. Greene; D. S. Soane; D. W. Hess
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Paper Abstract

The relative roles of ion bombardment and oxygen radicals have been examined for oxygen plasma etching of common photoresists and silicon containing resists. The degree of oxygen dissociation in the plasma has been measured as a function of power and pressure in the reactor. Etch rates for hydrocarbon resists increase with pressure over the range studied, although the ion bombardment energy and the flux of oxygen radicals decrease. This indicates that the supply of neutral oxygen molecules is the limiting factor in the range of operating conditions (20 to 80 mtorr) typically found in reactive ion etching (RIE). The role of ion induced damage is small for standard resist etching but the damage aids in the formation of an oxide layer when etching silicon containing materials.

Paper Details

Date Published: 1 January 1988
PDF: 12 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968308
Show Author Affiliations
M. A. Hartney, University of California (United States)
W. M. Greene, University of California (United States)
D. S. Soane, University of California (United States)
D. W. Hess, University of California (United States)

Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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