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Proceedings Paper

Heat Developable Resist For Multilayer Resist Technology
Author(s): Alfred Steinmann
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Paper Abstract

A novel, positive working, silicon-containing resist was developed for use in multilayer resist technology. The complexity of multilayer systems could successfully be reduced due to the dry development behaviour of the resist. Besides, the resist shows very high sensitivity on exposure to deep-UV radiation. Using appropriate sensitizers, the resist is also highly sensitive to g-, h- and i-line exposure, thus making the application in todays optical lithography possible. Submicron resolution could easily be achieved. Thanks to the high silicon content, resist structures were truly transferred into a planarizer resin by reactive ion etching in an oxygen plasma.

Paper Details

Date Published: 1 January 1988
PDF: 8 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968296
Show Author Affiliations
Alfred Steinmann, CIBA-GEIGY AG (Switzerland)


Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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