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Proceedings Paper

On The Generalised Carrier Statistics In A3 II B2V Type Of Nonlinear Optical Materials In The Presence Of Crossed Llectric And Maiznetic Fields
Author(s): S. Biswas; N. Chattopadhyay; K P. Ghatak
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Paper Abstract

In recent years, there has been considerable interest in studying the carrier statistics in nonlinear optical materials made of small gap semiconductors since the various electronic properties and the derivation of different important physical parameters of optoelectronic devices under varying situations are based on the relation between the Quasi-Fermi energy and the carrier concentration in such devices.

Paper Details

Date Published: 1 January 1987
PDF: 11 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967526
Show Author Affiliations
S. Biswas, Bengal Engineering College (India)
N. Chattopadhyay, University College of Science snd Technology (India)
K P. Ghatak, Advanced Study Centre of Radio Physics and Eletronics (India)

Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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