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Proceedings Paper

Analysis Of Franz-Keldysh Electro-Optic Modulation In InP, GaAs, GaSb, InAs, And InSb
Author(s): Brian R. Bennett; Richard A. Soref
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Paper Abstract

Effective mass theory and zero-field absorption data are used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) for five direct gap III-V semiconductors: InP, GaAs, GaSb, InAs, and InSb. Results are given for fields of 104 V/cm to the estimated breakdown strength and for photon energies of 40 and 80 meV below the band gap for each semiconductor.

Paper Details

Date Published: 1 January 1987
PDF: 11 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967524
Show Author Affiliations
Brian R. Bennett, Rome Air Development Center (United States)
Richard A. Soref, Rome Air Development Center (United States)

Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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