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Proceedings Paper

Design Issues For Monolithic Gallium Arsenide On Silicon Devices
Author(s): P. Christie; A. M. Barnett; K. D. Hobart; G. H. Negley
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Paper Abstract

Hybrid systems which merge silicon (Si) and gallium arsenide (GaAs) devices will produce a technology which combines high performance with ease of fabrication. Such heteroepitaxial optoelectronic circuits can help alleviate the interchip communication bottleneck created by present day VLSI technology and provide substantial immunity to electromagnetic interference. This paper describes the selective area growth of GaAs on Si for optical interconnects. The design issues and conflicts inherent in the fabrication of optical interconnects are discussed. Data relating to the monolithic integration of GaAs light emitting diodes (LED's) and Si field effect transistor (FET) drivers is presented.

Paper Details

Date Published: 1 January 1987
PDF: 5 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967512
Show Author Affiliations
P. Christie, University of Delaware (United States)
A. M. Barnett, University of Delaware (United States)
K. D. Hobart, University of Delaware (United States)
G. H. Negley, Astrosystems Inc. (United States)


Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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