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Proceedings Paper

Field-And Time-Dependent Photo And Dark Current Studies Of Semi-Insulating Gaas
Author(s): Terence Burke; Maurice Weiner; G. C. Vezzoli; B. Lalevic
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Paper Abstract

Photocurrent and dark current precise time-dependent measurements have been conducted on semi-insulating GaAs as functions of pulsed voltage at room and low temperature, employing pulsed and continuous illumination. These experiments have been performed also as functions of fast voltage interruptions and slow voltage interruptions and slow voltage relaxations, and their respective position in time (epoch) as well as the time of imposition of a field pulse. Further work was conducted on the response of photocurrent to follow rapidly oscillating cw voltage superimposed onto a field pulse. The objective of these studies is to assist in characterizing trapping levels in semi-insulating GaAs, including EL2, and to determine time-constants for current decay. From these experiments we deduced a trap saturation time of 300 ns and a trap liberation time of 8.5 - 10.0 ns.

Paper Details

Date Published: 1 January 1987
PDF: 19 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967510
Show Author Affiliations
Terence Burke, U.S. Army Electronics Technology and Devices Laboratory (United States)
Maurice Weiner, U.S. Army Electronics Technology and Devices Laboratory (United States)
G. C. Vezzoli, U.S. Army Materials Technology Laboratory (United States)
B. Lalevic, Rutgers University (United States)


Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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