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Proceedings Paper

Radiation Effects On Gallium Arsenide Integrated Optical Devices
Author(s): G. McWright; M. Lowry; F. Roeske; E. Takeuchi; W. Tindall; G. Murphy
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Paper Abstract

We discuss gallium arsenide integrated optical devices for high speed diagnostic systems. Specifically, we focus on the effect of radiation exposure on the performance characteristics of these devices.

Paper Details

Date Published: 1 January 1987
PDF: 5 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967502
Show Author Affiliations
G. McWright, Lawrence Livermore National Laboratory (United States)
M. Lowry, Lawrence Livermore National Laboratory (United States)
F. Roeske, Lawrence Livermore National Laboratory (United States)
E. Takeuchi, Lawrence Livermore National Laboratory (United States)
W. Tindall, Lawrence Livermore National Laboratory (United States)
G. Murphy, Lawrence Livermore National Laboratory (United States)


Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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