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Proceedings Paper

Integrated Optic Response To Nuclear Irradiations
Author(s): E. W. Taylor
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Paper Abstract

Experimental results are presented on LiNb03:Ti integrated optic device response to various nuclear irradiations. The results are compared to earlier studies performed on GaAlAs and LiNb03 and, the importance of various physical effects parameters such as photorefraction and photobleaching are presented for future consideration of studying device responses under varying temperature, optical power and irradiation levels. Data demonstrating the ability of LiNb03:Ti to withstand a gamma and X-ray accumulated dose of 204 Krad (Si) is reported and comparison of the data to a geminate ion recombination kinetic model is presented.

Paper Details

Date Published: 1 January 1987
PDF: 8 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967501
Show Author Affiliations
E. W. Taylor, Air Force Weapons Laboratory (United States)


Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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