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Proceedings Paper

The Improvement Of Stepper Process Latitude By Resist Process
Author(s): Tony Y. Liu
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Paper Abstract

The trend toward tighter design rules and larger chip sizes have driven the demand to obtain the ultimate performance from present steppers. In this study, the G-line steppers with 0.30 NA lens are used to print 1 micron geometries. It is found that the contrast enhanced resist process is feasible to print 1 micron geometries and a single layer resist process can be utilized to print 1 micron square contact by applying a sufficiently thin layer of resist to obtain a conformal coating over the topography. In addition, big contact on the mask should be sized to smaller sizes so that over-exposure can be utilized to open small contacts.

Paper Details

Date Published: 1 January 1987
PDF: 6 pages
Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); doi: 10.1117/12.967048
Show Author Affiliations
Tony Y. Liu, Advanced Micro Devices Inc. (United States)


Published in SPIE Proceedings Vol. 0772:
Optical Microlithography VI
Harry L. Stover, Editor(s)

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