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Proceedings Paper

Measurement And Control Of Wafer Temperature In A Plasma Etching Reactor
Author(s): Diane Vogel; Fred Wong
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Paper Abstract

ontrol of wafer temperature is essential for resist survival in plasma etching processes. Real time measurement in the reactor is difficult using conventional methods. In this work, a non-contact measurement technique is employed to study actual wafer temperatures as a function of process parameters. Various methods of thermal coupling between the wafer and the electrode are compared.

Paper Details

Date Published: 1 January 1987
PDF: 7 pages
Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); doi: 10.1117/12.967044
Show Author Affiliations
Diane Vogel, Varian Associates (United States)
Fred Wong, Varian Associates (United States)

Published in SPIE Proceedings Vol. 0772:
Optical Microlithography VI
Harry L. Stover, Editor(s)

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