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Proceedings Paper

Practical Considerations Of Submicron Photolithography
Author(s): Michele Nuhn; Shi Kay Yao; Todd Johnson; Brad Avrit
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Paper Abstract

In this paper, the image resolution and depth of focus of a 10X 0.42NA i-line wafer stepper is shown. The effects of photoresist processing on these parameters are demonstrated. The processing materials used include i-line resists and contrast enhancement material. Additionally, a machine approach to dealing with the limited depth of focus of this high numerical aperture lens stepper is investigated.

Paper Details

Date Published: 1 January 1987
PDF: 8 pages
Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); doi: 10.1117/12.967033
Show Author Affiliations
Michele Nuhn, American Semiconductor Equipment Technologies (United States)
Shi Kay Yao, American Semiconductor Equipment Technologies (United States)
Todd Johnson, American Semiconductor Equipment Technologies (United States)
Brad Avrit, Triquint Semiconductor (United States)

Published in SPIE Proceedings Vol. 0772:
Optical Microlithography VI
Harry L. Stover, Editor(s)

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