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Proceedings Paper

Focus : The Critical Parameter For Submicron Optical Lithography :Part 2
Author(s): William H. Arnold; Harry J. Levinson
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Paper Abstract

Depth of focus requirements and contributions to the focal error budget for submicron optical lithography are reviewed. Models are presented which estimate depth of focus in both thin and thick layers of photoresist. The effects of resist refraction on usable depth of focus are considered. Measurements of image plane tilt, curvature, and astigmatism in 5X reduction lenses collected using an automated, in situ, aerial image monitor are analyzed.

Paper Details

Date Published: 1 January 1987
PDF: 14 pages
Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); doi: 10.1117/12.967030
Show Author Affiliations
William H. Arnold, Advanced Micro Devices (United States)
Harry J. Levinson, Sierra Semiconductor (United States)

Published in SPIE Proceedings Vol. 0772:
Optical Microlithography VI
Harry L. Stover, Editor(s)

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