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Proceedings Paper

Photoluminescence Imaging As A Technique To Control The Uniformity Of The Electronical Properties Of Semiconductor Surface During Device Fabrication
Author(s): C. Lallemand; M. Garrigues; S. K. Krawczyk
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Paper Abstract

It has been shown recently that integrated photoluminescence (PL) measurements can be used as a probe of the "electronical quality" of semiconductor surfaces and is perfectly well adapted to control individual steps in the processing of semiconductor devices based on InP.

Paper Details

Date Published: 18 May 1987
PDF: 2 pages
Proc. SPIE 0702, International Topical Meeting on Image Detection and Quality, (18 May 1987); doi: 10.1117/12.966783
Show Author Affiliations
C. Lallemand, Laboratoire d'Electronique Automatique et Mesures Electriques, U.A. (CNRS) (France)
M. Garrigues, Laboratoire d'Electronique Automatique et Mesures Electriques, U.A. (CNRS) (France)
S. K. Krawczyk, Laboratoire d'Electronique Automatique et Mesures Electriques, U.A. (CNRS) (France)


Published in SPIE Proceedings Vol. 0702:
International Topical Meeting on Image Detection and Quality
Lucien F. Guyot, Editor(s)

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