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Proceedings Paper

Mercury Cadmium Telluride Infrared Detectors : Some Material Science Aspects
Author(s): Christian Verie
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Paper Abstract

Photovoltaic or photoconductive devices employing Hg1-xCdx Te alloys (MCI), have a widespread range of infrared detection applications, recently extended to the 1.3 μm and 1.5 μm channels of fibre optical communications. The IR image detection with a high quality, including modern focal plane imaging techniques, needs a high degree of perfection of the electronic characteristics of the monocrystalline MCT layers. This implies a good control over the structural properties of the crystals and for this purpose an understanding of the MCT Material Science specific properties is expected to delimit the actual application range of these narrow-gap semiconductors. In this talk, a particular emphasis is put upon the problem of lattice mismatch-induced defects of bulk and interfaces in MCT hetero-epitaxial layers (grown on various substra-tes as Cd Te, InSb, GaAs.. etc...) and this shows that the epitaxial growth of tviCT is not merely a straightforward extrapolation of the successful III- V semiconductor methods.

Paper Details

Date Published: 18 May 1987
PDF: 2 pages
Proc. SPIE 0702, International Topical Meeting on Image Detection and Quality, (18 May 1987); doi: 10.1117/12.966720
Show Author Affiliations
Christian Verie, Laboratoire de Physique du Solide, C.N.R.S. (France)


Published in SPIE Proceedings Vol. 0702:
International Topical Meeting on Image Detection and Quality
Lucien F. Guyot, Editor(s)

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