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Proceedings Paper

Reflectivity of Silicon Carbide in the Extreme Ultraviolet
Author(s): Stanley Mrowka; Patrick Jelinsky; Stuart Bowyer; Greg Sanger; W. J. Choyke
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Paper Abstract

We present reflectivity and scattering measurements on samples of silicon carbide manufactured by a variety of processes. Measurements were made from near normal to grazing incidence at wavelengths in the range of 114 to 1216 Å. Our findings confirm that CVD silicon carbide displays the highest reflectivity at EUV wavelengths and normal incidence. We also demonstrate that at grazing incidence, silicon rich samples show reflectivity cutoff identical to polycrystalline silicon. From the limited data available for single crystal material, we conclude that CVD material has comparable performance.

Paper Details

Date Published: 14 July 1986
PDF: 5 pages
Proc. SPIE 0597, X-Ray Instrumentation in Astronomy, (14 July 1986); doi: 10.1117/12.966574
Show Author Affiliations
Stanley Mrowka, University of California (United States)
Patrick Jelinsky, University of California (United States)
Stuart Bowyer, University of California (United States)
Greg Sanger, United Technologies Research Center (United States)
W. J. Choyke, Westinghouse Research Laboratories (United States)


Published in SPIE Proceedings Vol. 0597:
X-Ray Instrumentation in Astronomy
J. Leonard Culhane, Editor(s)

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