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Proceedings Paper

Effects of doping concentrations on the photocurrent and dark current of a CMOS photodiode
Author(s): Andrei Drӑgulinescu; Livier Lizarraga; Salvador Mir
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Paper Abstract

In this paper we present, for a CMOS n-diffusion photodiode, the effects of various doping concentrations on the behaviour of two of the main parameters that characterize the performance of these devices: the photocurrent (for low and for high levels of the illumination) and the dark current. We performed simulations aided by T-CAD tools for each type of layer of the CMOS photodiode structure (substrate, p-epitaxial layer, n-diffusion layer) and evaluated the behaviour of the photocurrent and dark current in various levels of the doping concentrations of these layers. These results may be helpful in the process of fabricating these devices, where controlled amounts of impurities may be added to some layers (or their level might be reduced in some other layers), in order to maximize the photocurrent and to minimize the dark current in these structures.

Paper Details

Date Published: 1 November 2012
PDF: 6 pages
Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84112G (1 November 2012); doi: 10.1117/12.966394
Show Author Affiliations
Andrei Drӑgulinescu, Politehnica Univ. of Bucharest (Romania)
Livier Lizarraga, TIMA Lab. (France)
Salvador Mir, TIMA Lab. (France)


Published in SPIE Proceedings Vol. 8411:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
Paul Schiopu; Razvan Tamas, Editor(s)

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