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Proceedings Paper

Sputtered In2O3:Sn films: Preparation and optical properties
Author(s): S.-J . Jiang; C. G. Granqvist
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Paper Abstract

We prepared In2O3:Sn coatings by reactive dc magnetron sputtering. At a substrate tem-perature of 300-400°C and a deposition rate of ~ 0.8 nm/s we could obtain transparent films with - 4% normal luminous absorptance, - 88% normal thermal reflectance, and - 3 x 10-4 Ωcm electrical dc resistivity. Spectrophotometric measurements were used to evaluate the complex dynamic resistivity. It could be reconciled with the Gerlach-Grosse theory for a gas of free electrons damped by ionized impurity scattering.

Paper Details

Date Published: 2 December 1985
PDF: 8 pages
Proc. SPIE 0562, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV, (2 December 1985); doi: 10.1117/12.966297
Show Author Affiliations
S.-J . Jiang, Chalmers University of Technology (Sweden)
C. G. Granqvist, Chalmers University of Technology (Sweden)


Published in SPIE Proceedings Vol. 0562:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV
Carl M. Lampert, Editor(s)

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