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Proceedings Paper

A novel GaInAs/GaAs Heterostructure Interdigital Photodetector (HIP) Using Lattice Mismatched Epitaxial Layers
Author(s): G. N. Maracas; D. Moore; J. K. Kim; R. S. Sillmon; S. M. Bedair; J. R. Hauser; T. Carruthers; L. Figueroa
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Paper Abstract

Planar high-speed interdigital photoconductive detectors have been fabricated on MOCVD-grown GaInAs/GaAs heterostructures. The small intentional lattice mismatch at the GaInAs/GaAs interface allows a controlled surface recombination velocity which decreases the effective lifetime of minority carriers without significant active layer mobility degradation. The InGaAs detectors have the following characteristics: bandgap of ~ 1.25 eV; rise times of < 25 psec; fall times ~ 50-100 psec; FWHM < 45 psec; high speed responsivity ~0.3 A/W; 2-300 nA leakage current at 5-10 V operating voltages and flat analog response to ~ 15 GHz.

Paper Details

Date Published: 28 November 1983
PDF: 5 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966098
Show Author Affiliations
G. N. Maracas, North Carolina State University (United States)
D. Moore, North Carolina State University (United States)
J. K. Kim, North Carolina State University (United States)
R. S. Sillmon, North Carolina State University (United States)
S. M. Bedair, North Carolina State University (United States)
J. R. Hauser, North Carolina State University (United States)
T. Carruthers, Naval Research Laboratory (United States)
L. Figueroa, TRW Research Center (United States)


Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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