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Proceedings Paper

Studies Of High Speed Photodetectors In III-V Compounds
Author(s): A. von Lehmen; S. Wojtczuk; D. K. Wagner; J. M. Ballantyne
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Paper Abstract

Optical techniques for time resolved studies of semiconductors are attractive because they are inherently limited only by the excitation laser pulsewidth. In recent years, various techniques have been exploited in measurements of photoexcited carrier dynamics and fast relaxation processes in GaAs and other semiconductors. Each optical technique has its own set of disadvantages. An absorption experiment requires a transparent sample or device. Because of the small signal, reflectivity experiments in the visible require good noise rejection. Time resolved luminescence measurements utilizing upconversion techniques have been difficult due to low upconversion efficiencies. However, the existence of a non-linearity in the luminescence of GaAs''' has made luminescent measurements easy, even at room temperature.

Paper Details

Date Published: 28 November 1983
PDF: 3 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966094
Show Author Affiliations
A. von Lehmen, Cornell University (United States)
S. Wojtczuk, Cornell University (United States)
D. K. Wagner, Cornell University (United States)
J. M. Ballantyne, Cornell University (United States)


Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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