Share Email Print

Proceedings Paper

Peak Conductance Measurements Of Gaas Switching Devices
Author(s): Barry A. Bell; Arnold G. Perrey
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper describes the test apparatus and circuitry used to make measurements of pulsed light conductance on samples of high resistivity (107 Ω-cm) gallium arsenide switching devices, having nominal 25 PM and 700 Pm gap spacings. Differences in conductance are observed on variously grown samples. Maximum peak light conductance obtained was ≈2 millisiemens for an effective irradiated optical power on the (25 μm) gap of approximately 130 milliwatts (λ = 850 nm). Comparisons are made between the observed pulse measurements and the pulse waveforms generated by computer simulation using a model based on a theoretical analysis of the relationships between photoconductance and irradiated optical power.

Paper Details

Date Published: 28 November 1983
PDF: 14 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966085
Show Author Affiliations
Barry A. Bell, National Bureau of Standards (United States)
Arnold G. Perrey, National Bureau of Standards (United States)

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

© SPIE. Terms of Use
Back to Top