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Proceedings Paper

Optoelectronic Devices For Millimeter-Waves
Author(s): Aileen M. Vaucher; Ming G. Li; Chi H. Lee; Charles D. Striffler
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Paper Abstract

We discuss the dynamic behavior of the propagation parameters of millimeter-waves in semiconductor waveguides when they are controlled by a laser induced electron-hole plasma. Depending upon the laser source and the semiconducting material utilized, high speed millimeter-wave phase shifters, modulators, switches, and gating devices may be constructed. Gated millimeter-wave pulses of 1 ns duration have been observed in a Si waveguide. Modulated millimeter-wave signals with pulse durations of ~ 400 ps and a modulation bandwidth approaching 1 GHz are readily available using a Cr:GaAs waveguide controlled by a mode-locked Nd:YAG laser. Control of the propagation properties of a Si waveguide has also been demonstrated using a GaAs diode laser. Simultaneous measurements of phase shift and attenuation in the waveguide as a function of time have been performed and a theoretical model has been developed which is in excellent agreement with the measured data.

Paper Details

Date Published: 28 November 1983
PDF: 5 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966084
Show Author Affiliations
Aileen M. Vaucher, University of Maryland (United States)
Ming G. Li, University of Maryland (United States)
Chi H. Lee, University of Maryland (United States)
Charles D. Striffler, University of Maryland (United States)

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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