Share Email Print
cover

Proceedings Paper

Modelocked Picosecond Pulses From 490 nm To 2 µm With Optically Pumped Semiconductor Lasers
Author(s): Roger S. Putnam; Michael M. Saloum
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We describe tunable cw modelocked laser action from synchronously pumped CdS, CdSSe, CdSe, InGaAsP and HgCdTe lasers. The 2-50 pm thick semiconductor platelets are longitudinally pumped and have produced 40 mW at 495 nm unmodelocked and a peak power of 50 Watts modelocked at 1.2μm. Pulsewidths of 4-6 ps with time-bandwidth products of 0.6-1.7 are obtained using intracavity etalons and Lyot filters. Intracavity tuning achieves a single crystal range of 7 nm in CdS at 495 nm, 29 nm in InGaAsP at 1.2 μm and a range of 60 nm in HgCdTe at 1.8 μm. As many as two dozen crystals have been mounted together on a micrometer stage within the dewar to all an immediate and wide tuning range. Also tuning from 1.82 to 2.0 μm via the Burstein-Moss shift in a single HgCdTe epilayer has been accomplished by varying the loss in the external cavity. A modelocked threshold as law as 0.3 mW in CdS, a 20% conversion efficiency into the TEMoo mode, and lasing in InGaAsP with optical pumping a full 1.5 eV above a 1 eV bandaap shows that an efficient and convenient picosecond source tunable through the visible and near infrared is feasible.

Paper Details

Date Published: 28 November 1983
PDF: 5 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966075
Show Author Affiliations
Roger S. Putnam, Massachusetts Institute of Technology (United States)
Michael M. Saloum, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

© SPIE. Terms of Use
Back to Top