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Proceedings Paper

Semiconductor Lasers Optically Pumped By Injection Lasers
Author(s): M. A. Duguay; T. C. Damen
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Paper Abstract

Ultrashort cavity semiconductor lasers have been pumped at room temperature by AℓGaAs injection lasers. Peak powers of up to 10 mW were obtained in InP in the form of single longitudinal mode subnanosecond pulses. Conversion efficiency from the injection laser pump power to lasing power was up to 8 percent in InP. Tuning over 150 A° was seen.

Paper Details

Date Published: 28 November 1983
PDF: 4 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966073
Show Author Affiliations
M. A. Duguay, Bell Laboratories (United States)
T. C. Damen, Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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