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Proceedings Paper

Picosecond Photoconductivity In 3He+ Bombarded Inp
Author(s): P. M. Downey; B. Schwartz
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Paper Abstract

3He+ bombardment is shown to be an effective means of achieving very short free carrier lifetimes in Fe-doped InP. Photoconductivity studies indicate free carrier mobilities (~600 cm2/Vs with carrier relaxation times of 6 psec. Preliminary correlation measurements demonstrate that carrier lifetimes less than 5 psec have been achieved in InP using 3He+ bombardment without compromising the dark resistance of the photoconductors. The upper limit to the lifetime is a consequence of using coaxial cables in the correlation circuit.

Paper Details

Date Published: 28 November 1983
PDF: 4 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966069
Show Author Affiliations
P. M. Downey, Bell Telephone Laboratories (United States)
B. Schwartz, Bell Telephone Laboratories (United States)

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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