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Proceedings Paper

Photoluminescence Dynamics Of High Density Electron Hole Plasma In Ga.5 In.5 P Under High Power Picosecond Laser Pulse Excitation
Author(s): H. Zarrabi; R. R. Alfano
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Paper Abstract

Time resolved kinetics of Ga.5 In.5 P was measured by a streak camera system. The emission recombination time was measured to be 40 ps at room temperature and 70 ps at T=78K. As excitation power density increased the band to band photoluminescence spectra at room temperature broadens, shifts to higher energy and at highest excitation power the emission spectra exhibits an overlapping of two peaks. At T=78K when excitation power density increased there appears to be another peak at the high energy side of the spectrum. The low energy band does not shift with excitation power while the high energy peak grows in intensity. We attributed these two bands to the recombination of electrons with holes in heavy and split off valence band.

Paper Details

Date Published: 28 November 1983
PDF: 4 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966068
Show Author Affiliations
H. Zarrabi, The City College of NY (United States)
R. R. Alfano, The City College of NY (United States)

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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