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Proceedings Paper

Photoexcited Carrier Lifetime And Auger Recombination In 1.3 Micron Bandgap InGaAsP
Author(s): J. P. Heritage; B. Sermage; O. E. Martinez
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Paper Abstract

Time-resolved measurements of the decay of photoexcited carriers in InGaAsP revea1 the presence of Auger recombination at carrier concentrations near and above 3x1018 cm-3. Our results suggest that while Auger recombination does contribute to the temperature dependence of the InGaAsP-1.3μm laser, it may not alone fully account for poorer room temperature dependence of InGaAsP-InP compared to GaAs-GaA1As lasers.

Paper Details

Date Published: 28 November 1983
PDF: 4 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966066
Show Author Affiliations
J. P. Heritage, Bell Telephone Laboratories (United States)
B. Sermage, Bell Telephone Laboratories (United States)
O. E. Martinez, Bell Telephone Laboratories (United States)


Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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