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Proceedings Paper

Picosecond Electronic Relaxations In Amorphous Semiconductors
Author(s): Jan Tauc
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Paper Abstract

Using the pump and probe technique the relaxation processes of photogenerated carriers in amorphous tetrahedral semiconductors and chalcogenide glasses in the time domain from 0.5 Ps to 1.4 ns have been studied. The results obtained on the following phenomena are reviewed: hot carrier thermalization in amorphous silicon; trapping of carriers in undoped a-Si:H; trapping of carriers in deep traps produced by doping; geminate recombination in As2S3-xSex glasses.

Paper Details

Date Published: 28 November 1983
PDF: 8 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966065
Show Author Affiliations
Jan Tauc, Brown University (United States)

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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