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Proceedings Paper

Texas Instruments (TI) 800X800 Charge-Coupled Device (CCD) Image Sensor
Author(s): Morley M. Blouke; James R. Janesick; Joseph E. Hall; Marvin W. Cowens
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Paper Abstract

The design and performance of the Texas Instruments 800 x 800 CCD imager are described. This device is fabricated utilizing a three phase, three level polysilicon gate process. The chip is thinned to ~ 8 μm and is employed in the rear illumination mode. Detailed measurements of device performance including dark current as a function of temperature, linearity, and noise are presented. The device is coated with a UV downconverting phosphor which allows imaging with the same device over an extremely wide optical bandwidth.

Paper Details

Date Published: 1 January 1981
PDF: 10 pages
Proc. SPIE 0290, Solid-State Imagers for Astronomy, (1 January 1981); doi: 10.1117/12.965830
Show Author Affiliations
Morley M. Blouke, Texas Instruments Inc. (United States)
James R. Janesick, Jet Propulsion Laboratory (United States)
Joseph E. Hall, Texas Instruments Inc. (United States)
Marvin W. Cowens, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 0290:
Solid-State Imagers for Astronomy
John C. Geary; David W. Latham, Editor(s)

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