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Proceedings Paper

Charge Trapping At The Hg0.7Cd0.3Te-Anodic Oxide Interface
Author(s): B. K. Janousek; M. J. Daugherty; R. B. Schoolar
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Paper Abstract

Infrared devices employing (Hg,Cd)Te require a surface passivation treatment that results in a stable semiconductor surface potential. Therefore, if a passivant has any charge associated with it, it is necessary that the density of this charge be reproducible and stable. In this paper we report a study of the variability of the charge density in anodic oxides in biased anodic oxide-(Hg,Cd)Te MOS structures. When these MOS structures are biased at a constant negative voltage, the oxide charge becomes progressively more positive, the shift in flat-band voltage being proportional to the logarithm of the bias time. The rate of net charge exchange between the oxide and semiconductor increases with temperature, but the system finally relaxes to a new oxide charge density which is independent of temperature. These results indicate that biased anodic oxide - (Hg,Cd)Te MOS structures are typically out of equilibrium and the relationship between gate voltage and semiconductor surface potential continues to vary under this condition.

Paper Details

Date Published:
PDF: 8 pages
Proc. SPIE 0285, Infrared Detector Materials, ; doi: 10.1117/12.965800
Show Author Affiliations
B. K. Janousek, The Aerospace Corporation (United States)
M. J. Daugherty, The Aerospace Corporation (United States)
R. B. Schoolar, The Aerospace Corporation (United States)

Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)

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