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Proceedings Paper

Slider Liquid-Phase Epitaxy (LPE) Of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te
Author(s): J. L. Schmit; R. J. Hager; R. A. Wood
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Paper Abstract

We describe the Liquid Phase Epitaxial (LPE) growth of p-Hgl-xCdxTe on CdTe substrates up to 2cm x 3cm in area, using an atomospheric pressure slider with a tellurium-rich growth liquid. Controlled growth of Hgl-x CdxTe with x values of 0.2, 0.3, and 0.4 will be described, and measurements presented on the morphology and semiconductor characteristics of the grown layers.

Paper Details

Date Published: 11 June 1981
PDF: 4 pages
Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965797
Show Author Affiliations
J. L. Schmit, Honeywell Corporate Technology Center (United States)
R. J. Hager, Honeywell Corporate Technology Center (United States)
R. A. Wood, Honeywell Corporate Technology Center (United States)


Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)

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