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Proceedings Paper

GaAs1-xSbx Quadrant Detector Development For 1 µm Application
Author(s): N. Bottka; Marian E. Hills
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Paper Abstract

GaAs1-xSbx ternary alloys grown epitaxially on n+ GaAs substrates were used to fabricate large-area Schottky barrier quadrant detectors. Proton bombardment was used to form planar guard rings around the quadrants. The planar-guarded diodes showed a reverse bias breakdown of 65 V. Under high electric field conditions, these detectors allow spectral tuning by variation of the field.

Paper Details

Date Published:
PDF: 5 pages
Proc. SPIE 0285, Infrared Detector Materials, ; doi: 10.1117/12.965795
Show Author Affiliations
N. Bottka, Naval Weapons Center (United States)
Marian E. Hills, Naval Weapons Center (United States)

Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)

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