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Proceedings Paper

Low Temperature Liquid-Phase Epitaxy (LPE) Growth Of Ga0.47In0.53As
Author(s): D. P. Mullin; A. R. Clawson
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Paper Abstract

Epitaxial layers of Ga0.471n0.53As lattice matched to InP substrates show promise for avalanche photodiodes, p-i-n photodiodes and phototransistors in 1.0 to 1.6 μm spectral range of particular interest for optical fiber communication systems. This paper reports the investigation of (100) orientation Ga0.471n0.53As layer growth utilizing liquid-phase epitaxy (LPE) from solutions at temperatures of about 530°C. Phase diagram calculations have shown 530°C to be an optimum temperature for compositionally uniform equilibrium growth of this ternary and most likely the lowest practical growth temperature without severe compositional variation. Additionally, growth temperatures lower than the usual 600 to 700°C range for GaInAs are expected to reduce InP substrate thermal degradation, interdiffusion of impurities at the layer-substrate interface or between layers, and the loss of volatile constituents from the grarth solution. lipttice-matched layers have been prepared from solutions with XℓGa/XℓIn = 0.014 and XℓAs = 0.0177 with a liquidus temperature of 536°C. Layers ranging in thickness from 0.3 to 5.0 μm show morphology and electrical properties comparable to layers grown at higher temperatures. Lengthy baking of the growth solution is found to be essential to reducing the backoround impurity. Electrically n-type layers are prepared utilizing the backoround impurity species and p-type are prepared by doping with Zn.

Paper Details

Date Published:
PDF: 5 pages
Proc. SPIE 0285, Infrared Detector Materials, ; doi: 10.1117/12.965794
Show Author Affiliations
D. P. Mullin, Naval Ocean Systems Center (United States)
A. R. Clawson, Naval Ocean Systems Center (United States)

Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)

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