Share Email Print
cover

Proceedings Paper

Compound Semiconductor Materials For Near-Infrared Photodetectors
Author(s): G. E. Stillman; L. W. Cook; T. J. Roth; M. M. Tashima
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The material requirements for near infrared detectors are discussed, and four different LPE growth techniques used to grow InGaAsP epitaxial layers lattice matched to (100)-InP substrates are described. The methods required for the growth of constant composition high purity LPE material are reviewed, and the problems of grading at heterojunction interfaces are discussed. VPE growth techniques are described which are currently under development to avoid some of these problems.

Paper Details

Date Published:
PDF: 8 pages
Proc. SPIE 0285, Infrared Detector Materials, ; doi: 10.1117/12.965793
Show Author Affiliations
G. E. Stillman, University of Illinois at Urbana-Champaign (United States)
L. W. Cook, University of Illinois at Urbana-Champaign (United States)
T. J. Roth, University of Illinois at Urbana-Champaign (United States)
M. M. Tashima, University of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)

© SPIE. Terms of Use
Back to Top