Proceedings PaperOptical Studies Of Defect States In The IV-VI Compounds
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The use of optical measurements for the characterization of defects is described. The absence of shallow levels in these materials has led to a slow start in this field. Earlier studies primarily focused on carrier recombination time determinations from photoconductance measurements. Several recent experiments are reviewed. Evidence for shallow levels at high magnetic fields is discussed. Deep levels, arising from vacancies, or from Group III impurities strongly influence the electronic properties of the Pb salts. The corresponding optical properties are intriguing. They are discussed within the framework of current ideas about the nature of deep levels in semiconductors. Because of the finite penetration of optical radiation into the samples the measurements can be used as a probe of interfaces. The study of the substrate strain profile of epitaxial films by this method is described. Future developments in the field are also considered.